HYPRES leads the industry in the development of random access memories (RAMs) as well as non-volatile memories for use with cryogenic ICs. In addition, we are also active in the design of FIFO (first in, first out) memory structures and shift registers for on-chip data acquisition at multi-GHz rates.

Random Access Memory

  • Low-access time
  • Non-volatile
  • Shift Register and FIFOs
  • Silicon-on-Insulator (SOI) CMOS interface ASIC design
  • 144 GHz SFQ Shift Registers