HYPRES leads the industry in the development of random access memories (RAMs) as well as non-volatile memories for use with cryogenic ICs. In addition, we are also active in the design of FIFO (first in, first out) memory structures and shift registers for on-chip data acquisition at multi-GHz rates.
Random Access Memory
- Low-access time
- Shift Register and FIFOs
- Silicon-on-Insulator (SOI) CMOS interface ASIC design
- 144 GHz SFQ Shift Registers